КФУ. Карточка публикации. SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION

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SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION

Форма представления

Статьи в российских журналах и сборниках

Год публикации

2015

Язык

английский

Авторы, сотрудники КФУ

Воробьев Вячеслав Валерьевич, автор

Осин Юрий Николаевич, автор

Другие авторы

Kavetskyy T S, автор

Nuzhdin V I, автор

Valeev V F, автор

Авторы, аспиранты КФУ

Воробьев Вячеслав Валерьевич, автор

Библиографическое описание на языке оригинала

SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION / A.L. Stepanov, V.I. Nuzhdin, V.F. Valeev, V.V. Vorobev, T.S. Kavetskyy, Y.N. Osin, // REVIEWS ON ADVANCED MATERIALS SCIENCE. - 2015. - № 40. - P. 155-164

Аннотация

Porous materials have attracted remarkable concerns and found tremendous importance widespread in both fundamental research and industrial applications. Such materials could be widely used for variety applications as absorbents, lightings, catalysts, and for biological molecular filtration and isolation. One quite known method for preparation of porous semiconductor structures is ion implantation, which was successfully used to create porous germanium layers by Ge+-, Bi+- and Sn+-ion irradiation of crystalline germanium substrates. It was also shown that ion implantation suited to produce porous structures in amorphous germanium and SiGe (90% of germanium) alloys thin films. Ion implantation is a well established and all over the world accessible technique, being mainly used for semiconductor microelectronic device fabrication. Unfortunately, a possibility about porous silicon (PSi) fabrication using ion implantation was not completely studied now.

Ключевые слова

POROUS SILICON, implantation

Название журнала

Reviews on Advanced Materials Science

URL

http://www.ipme.ru/e-journals/RAMS/no_24015/05_24015_stepanov.html

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https://repository.kpfu.ru/?p_id=106046

Полная запись метаданных

Поле DC	Значение	Язык
dc.contributor.author	Воробьев Вячеслав Валерьевич	ru_RU
dc.contributor.author	Осин Юрий Николаевич	ru_RU
dc.contributor.author	Kavetskyy T S	ru_RU
dc.contributor.author	Nuzhdin V I	ru_RU
dc.contributor.author	Valeev V F	ru_RU
dc.contributor.author	Воробьев Вячеслав Валерьевич	ru_RU
dc.contributor.author	Воробьев Вячеслав Валерьевич	ru_RU
dc.contributor.author	Воробьев Вячеслав Валерьевич	ru_RU
dc.date.accessioned	2015-01-01T00:00:00Z	ru_RU
dc.date.available	2015-01-01T00:00:00Z	ru_RU
dc.date.issued	2015	ru_RU
dc.identifier.citation	SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION / A.L. Stepanov, V.I. Nuzhdin, V.F. Valeev, V.V. Vorobev, T.S. Kavetskyy, Y.N. Osin, // REVIEWS ON ADVANCED MATERIALS SCIENCE. - 2015. - № 40. - P. 155-164	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/?p_id=106046	ru_RU
dc.description.abstract	Reviews on Advanced Materials Science	ru_RU
dc.description.abstract	Porous materials have attracted remarkable concerns and found tremendous importance widespread in both fundamental research and industrial applications. Such materials could be widely used for variety applications as absorbents, lightings, catalysts, and for biological molecular filtration and isolation. One quite known method for preparation of porous semiconductor structures is ion implantation, which was successfully used to create porous germanium layers by Ge+-, Bi+- and Sn+-ion irradiation of crystalline germanium substrates. It was also shown that ion implantation suited to produce porous structures in amorphous germanium and SiGe (90% of germanium) alloys thin films. Ion implantation is a well established and all over the world accessible technique, being mainly used for semiconductor microelectronic device fabrication. Unfortunately, a possibility about porous silicon (PSi) fabrication using ion implantation was not completely studied now.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	POROUS SILICON	ru_RU
dc.subject	implantation	ru_RU
dc.title	SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION	ru_RU
dc.type	Статьи в российских журналах и сборниках	ru_RU