| Форма представления | Статьи в зарубежных журналах и сборниках |
| Год публикации | 2015 |
| Язык | английский |
|
Петухов Денис Александрович, автор
Тагиров Ленар Рафгатович, автор
Усеинов Ниазбек Хамзович, автор
|
| Библиографическое описание на языке оригинала |
Useinov, N.Kh. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions / N.Kh. Useinov, D.A. Petukhov, L.R. Tagirov // Journal of Magnetism and Magnetic Materials. – 2015. – V. 373. – P. 27-29. |
| Аннотация |
The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. |
| Ключевые слова |
Spin-polarized conductance, Magnetic tunnel junction, Nanostructure,Tunnel magnetoresistance |
| Название журнала |
Journal of Magnetism and Magnetic Materials
|
| URL |
http://dx.doi.org/10.1016/j.jmmm.2014.02.051 |
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=120039 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Петухов Денис Александрович |
ru_RU |
| dc.contributor.author |
Тагиров Ленар Рафгатович |
ru_RU |
| dc.contributor.author |
Усеинов Ниазбек Хамзович |
ru_RU |
| dc.date.accessioned |
2015-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2015-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2015 |
ru_RU |
| dc.identifier.citation |
Useinov, N.Kh. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions / N.Kh. Useinov, D.A. Petukhov, L.R. Tagirov // Journal of Magnetism and Magnetic Materials. – 2015. – V. 373. – P. 27-29. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=120039 |
ru_RU |
| dc.description.abstract |
Journal of Magnetism and Magnetic Materials |
ru_RU |
| dc.description.abstract |
The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Spin-polarized conductance |
ru_RU |
| dc.subject |
Magnetic tunnel junction |
ru_RU |
| dc.subject |
Nanostructure |
ru_RU |
| dc.subject |
Tunnel magnetoresistance |
ru_RU |
| dc.title |
Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions |
ru_RU |
| dc.type |
Статьи в зарубежных журналах и сборниках |
ru_RU |
|
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