| Форма представления | Статьи в зарубежных журналах и сборниках |
| Год публикации | 2015 |
| Язык | русский |
|
Усеинов Артур Ниазбекович, автор
Усеинов Ниазбек Хамзович, автор
|
|
Lai C. H., автор
|
| Библиографическое описание на языке оригинала |
Useinov, A.N. Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles / A.N. Useinov, N.K. Useinov, L.-Xe. Ye, T.-H. Wu, C.-H. Lai // IEEE Transactions on Magnetics. - 2015. 51, Issue: 11 Article #: 4401404, DOI: 10.1109/TMAG.2015.2451705. |
| Аннотация |
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic
nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily
simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages
are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained
within the tunneling model, where NP is simulated as a quantum well (QW). The coherent double barrier tunneling is dominating
over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being
in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry. |
| Ключевые слова |
Ballistic transport, magnetic tunnel junctions, nanoparticles, tunnel magnetoresistance. |
| Название журнала |
IEEE Transactions on Magnetics
|
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=120062 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Усеинов Артур Ниазбекович |
ru_RU |
| dc.contributor.author |
Усеинов Ниазбек Хамзович |
ru_RU |
| dc.contributor.author |
Lai C. H. |
ru_RU |
| dc.date.accessioned |
2015-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2015-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2015 |
ru_RU |
| dc.identifier.citation |
Useinov, A.N. Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles / A.N. Useinov, N.K. Useinov, L.-Xe. Ye, T.-H. Wu, C.-H. Lai // IEEE Transactions on Magnetics. - 2015. 51, Issue: 11 Article #: 4401404, DOI: 10.1109/TMAG.2015.2451705. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=120062 |
ru_RU |
| dc.description.abstract |
IEEE Transactions on Magnetics |
ru_RU |
| dc.description.abstract |
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic
nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily
simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages
are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained
within the tunneling model, where NP is simulated as a quantum well (QW). The coherent double barrier tunneling is dominating
over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being
in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Ballistic transport |
ru_RU |
| dc.subject |
magnetic tunnel junctions |
ru_RU |
| dc.subject |
nanoparticles |
ru_RU |
| dc.subject |
tunnel magnetoresistance. |
ru_RU |
| dc.title |
Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles |
ru_RU |
| dc.type |
Статьи в зарубежных журналах и сборниках |
ru_RU |
|
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