КФУ. Карточка публикации. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

КАЗАНСКИЙ
ФЕДЕРАЛЬНЫЙ УНИВЕРСИТЕТ

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TUNNEL MAGNETORESISTANCE IN ASYMMETRIC DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTIONS

Форма представления

Статьи в российских журналах и сборниках

Год публикации

2015

Язык

английский

Авторы, сотрудники КФУ

Тагиров Ленар Рафгатович, автор

Библиографическое описание на языке оригинала

Useinov, N.Kh. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions / N.Kh. Useinov, D.A. Petukhov, L.R. Tagirov // Journal of Magnetism and Magnetic Materials. – 2015. – V. 373. – P. 27-29.

Аннотация

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR.

Ключевые слова

Spin-polarized conductance; Magnetic tunnel junction; Nanostructure; Tunnel magnetoresistance

Название журнала

PHYSICA E

URL

http://dx.doi.org/10.1016/j.jmmm.2014.02.051

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https://repository.kpfu.ru/?p_id=137941

Полная запись метаданных

Поле DC	Значение	Язык
dc.contributor.author	Тагиров Ленар Рафгатович	ru_RU
dc.date.accessioned	2015-01-01T00:00:00Z	ru_RU
dc.date.available	2015-01-01T00:00:00Z	ru_RU
dc.date.issued	2015	ru_RU
dc.identifier.citation	Useinov, N.Kh. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions / N.Kh. Useinov, D.A. Petukhov, L.R. Tagirov // Journal of Magnetism and Magnetic Materials. – 2015. – V. 373. – P. 27-29.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/?p_id=137941	ru_RU
dc.description.abstract	PHYSICA E	ru_RU
dc.description.abstract	The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject		ru_RU
dc.title	Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions	ru_RU
dc.type	Статьи в российских журналах и сборниках	ru_RU