| Форма представления | Статьи в российских журналах и сборниках |
| Год публикации | 2017 |
| Язык | английский |
|
Вахитов Искандер Рашидович, автор
Гумаров Амир Илдусович, автор
Киямов Айрат Газинурович, автор
Никитин Сергей Иванович, автор
Тагиров Ленар Рафгатович, автор
Харинцев Сергей Сергеевич, автор
Юсупов Роман Валерьевич, автор
Янилкин Игорь Витальевич, автор
|
| Библиографическое описание на языке оригинала |
Mohammed W. M. et al. Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering //Journal of Physics: Conference Series. – IOP Publishing, 2017. – Т. 927. – №. 1. – С. 012036. |
| Аннотация |
Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method. |
| Ключевые слова |
Deposition conditions,metallic targets, MgO substrate, polycrystalline, reactive DC magnetron sputtering, reactive magnetron sputtering, titanium nitride films, Van der Pauw method |
| Название журнала |
Journal of Physics: Conference Series
|
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=173295 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Вахитов Искандер Рашидович |
ru_RU |
| dc.contributor.author |
Гумаров Амир Илдусович |
ru_RU |
| dc.contributor.author |
Киямов Айрат Газинурович |
ru_RU |
| dc.contributor.author |
Никитин Сергей Иванович |
ru_RU |
| dc.contributor.author |
Тагиров Ленар Рафгатович |
ru_RU |
| dc.contributor.author |
Харинцев Сергей Сергеевич |
ru_RU |
| dc.contributor.author |
Юсупов Роман Валерьевич |
ru_RU |
| dc.contributor.author |
Янилкин Игорь Витальевич |
ru_RU |
| dc.date.accessioned |
2017-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2017-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2017 |
ru_RU |
| dc.identifier.citation |
Mohammed W. M. et al. Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering //Journal of Physics: Conference Series. – IOP Publishing, 2017. – Т. 927. – №. 1. – С. 012036. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=173295 |
ru_RU |
| dc.description.abstract |
Journal of Physics: Conference Series |
ru_RU |
| dc.description.abstract |
Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Deposition conditions |
ru_RU |
| dc.subject |
metallic targets |
ru_RU |
| dc.subject |
MgO substrate |
ru_RU |
| dc.subject |
polycrystalline |
ru_RU |
| dc.subject |
reactive DC magnetron sputtering |
ru_RU |
| dc.subject |
reactive magnetron sputtering |
ru_RU |
| dc.subject |
titanium nitride films |
ru_RU |
| dc.subject |
Van der Pauw method |
ru_RU |
| dc.title |
Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering |
ru_RU |
| dc.type |
Статьи в российских журналах и сборниках |
ru_RU |
|
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