Форма представления | Статьи в зарубежных журналах и сборниках |
Год публикации | 2017 |
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Вахитов Искандер Рашидович, автор
Гумаров Амир Илдусович, автор
И Яньпин , автор
Киямов Айрат Газинурович, автор
Никитин Сергей Иванович, автор
Тагиров Ленар Рафгатович, автор
Харинцев Сергей Сергеевич, автор
Юсупов Роман Валерьевич, автор
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Мохаммед Ваель Мохаммед Махмуд, автор
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Библиографическое описание на языке оригинала |
Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method. |
Аннотация |
Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method. |
Ключевые слова |
polycrystalline- van-der Pauw method - four point prob |
Место издания |
United Kingdom |
Название журнала |
Journal of Physics: Conference Series
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Издательство |
IOP Science, scopus |
URL |
http://iopscience.iop.org/article/10.1088/1742-6596/927/1/012036 |
Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=184697 |
Полная запись метаданных |
Поле DC |
Значение |
Язык |
dc.contributor.author |
Вахитов Искандер Рашидович |
ru_RU |
dc.contributor.author |
Гумаров Амир Илдусович |
ru_RU |
dc.contributor.author |
И Яньпин |
ru_RU |
dc.contributor.author |
Киямов Айрат Газинурович |
ru_RU |
dc.contributor.author |
Никитин Сергей Иванович |
ru_RU |
dc.contributor.author |
Тагиров Ленар Рафгатович |
ru_RU |
dc.contributor.author |
Харинцев Сергей Сергеевич |
ru_RU |
dc.contributor.author |
Юсупов Роман Валерьевич |
ru_RU |
dc.contributor.author |
Мохаммед Ваель Мохаммед Махмуд |
ru_RU |
dc.date.accessioned |
2017-01-01T00:00:00Z |
ru_RU |
dc.date.available |
2017-01-01T00:00:00Z |
ru_RU |
dc.date.issued |
2017 |
ru_RU |
dc.identifier.citation |
Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method. |
ru_RU |
dc.identifier.uri |
https://repository.kpfu.ru/?p_id=184697 |
ru_RU |
dc.description.abstract |
Journal of Physics: Conference Series |
ru_RU |
dc.description.abstract |
Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method. |
ru_RU |
dc.language.iso |
ru |
ru_RU |
dc.publisher |
IOP Science, scopus |
ru_RU |
dc.subject |
|
ru_RU |
dc.title |
Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering |
ru_RU |
dc.type |
Статьи в зарубежных журналах и сборниках |
ru_RU |
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