КФУ. Карточка публикации. Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering

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ELECTRICAL PROPERTIES OF TITANIUM NITRIDE FILMS SYNTHESIZED BY REACTIVE MAGNETRON SPUTTERING

Форма представления

Статьи в зарубежных журналах и сборниках

Год публикации

2017

Авторы, сотрудники КФУ

Вахитов Искандер Рашидович, автор

Гумаров Амир Илдусович, автор

И Яньпин , автор

Киямов Айрат Газинурович, автор

Никитин Сергей Иванович, автор

Тагиров Ленар Рафгатович, автор

Харинцев Сергей Сергеевич, автор

Юсупов Роман Валерьевич, автор

Авторы, аспиранты КФУ

Мохаммед Ваель Мохаммед Махмуд, автор

Библиографическое описание на языке оригинала

Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.

Аннотация

Ключевые слова

polycrystalline- van-der Pauw method - four point prob

Место издания

United Kingdom

Название журнала

Journal of Physics: Conference Series

Издательство

IOP Science, scopus

URL

http://iopscience.iop.org/article/10.1088/1742-6596/927/1/012036

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https://repository.kpfu.ru/?p_id=184697

Полная запись метаданных

Поле DC	Значение	Язык
dc.contributor.author	Вахитов Искандер Рашидович	ru_RU
dc.contributor.author	Гумаров Амир Илдусович	ru_RU
dc.contributor.author	И Яньпин	ru_RU
dc.contributor.author	Киямов Айрат Газинурович	ru_RU
dc.contributor.author	Никитин Сергей Иванович	ru_RU
dc.contributor.author	Тагиров Ленар Рафгатович	ru_RU
dc.contributor.author	Харинцев Сергей Сергеевич	ru_RU
dc.contributor.author	Юсупов Роман Валерьевич	ru_RU
dc.contributor.author	Мохаммед Ваель Мохаммед Махмуд	ru_RU
dc.date.accessioned	2017-01-01T00:00:00Z	ru_RU
dc.date.available	2017-01-01T00:00:00Z	ru_RU
dc.date.issued	2017	ru_RU
dc.identifier.citation	Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/?p_id=184697	ru_RU
dc.description.abstract	Journal of Physics: Conference Series	ru_RU
dc.description.abstract	Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.	ru_RU
dc.language.iso	ru	ru_RU
dc.publisher	IOP Science, scopus	ru_RU
dc.subject		ru_RU
dc.title	Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering	ru_RU
dc.type	Статьи в зарубежных журналах и сборниках	ru_RU