| Форма представления | Тезисы и материалы конференций в зарубежных журналах и сборниках |
| Год публикации | 2020 |
| Язык | английский |
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Вагизов Фарит Габдулхакович, автор
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Ghassemi Nader , автор
Li Rui , автор
Ren Wuyang , автор
Ren Wuyang , автор
Ren Zhifeng , автор
Ross Joseph H. , автор
Tian Yefan , автор
Zhu Hangtian , автор
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| Библиографическое описание на языке оригинала |
Tian, Y. NMR and Mössbauer study of p-type half-Heusler thermoelectrics Nb 1− x Ti x FeSb / Y Tian, R Li, F Vagizov, N Ghassemi, W Ren, H Zhu, Z Ren, J Ross // Bulletin of the American Physical Society. - 2020. - v.65, No. 1 - G27.00015 |
| Аннотация |
APS March Meeting 2020 March 2–6, 2020; Denver, Colorado Session G27: Electronic Structure: Thermodynamic & Optical Properties |
| Ключевые слова |
Mossbauer spectroscopy, NMR, thermoelectric efficiency, NbFeSb-based semiconductors, |
| Название журнала |
APS March Meeting 2020 March 2–6, 2020; Denver, Colorado Session G27: Electronic Structure: Thermodynamic & Optical Properties
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| Ссылка для РПД |
http://dspace.kpfu.ru/xmlui/bitstream/handle/net/158965/F_Vagizov_NMR_and_M__246_ssbauer_study_of_p_type_half__eusler_thermoelectrics_Nb1__8722__xTi_xFeSb.pdf?sequence=1&isAllowed=y
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| URL |
http://meetings.aps.org/Meeting/MAR20/Session/G27.15 |
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=234710 |
| Файлы ресурса | |
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Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Вагизов Фарит Габдулхакович |
ru_RU |
| dc.contributor.author |
Ghassemi Nader |
ru_RU |
| dc.contributor.author |
Li Rui |
ru_RU |
| dc.contributor.author |
Ren Wuyang |
ru_RU |
| dc.contributor.author |
Ren Wuyang |
ru_RU |
| dc.contributor.author |
Ren Zhifeng |
ru_RU |
| dc.contributor.author |
Ross Joseph H. |
ru_RU |
| dc.contributor.author |
Tian Yefan |
ru_RU |
| dc.contributor.author |
Zhu Hangtian |
ru_RU |
| dc.date.accessioned |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2020 |
ru_RU |
| dc.identifier.citation |
Tian, Y. NMR and Mössbauer study of p-type half-Heusler thermoelectrics Nb 1− x Ti x FeSb / Y Tian, R Li, F Vagizov, N Ghassemi, W Ren, H Zhu, Z Ren, J Ross // Bulletin of the American Physical Society. - 2020. - v.65, No. 1 - G27.00015 |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=234710 |
ru_RU |
| dc.description.abstract |
APS March Meeting 2020 March 2–6, 2020; Denver, Colorado Session G27: Electronic Structure: Thermodynamic & Optical Properties |
ru_RU |
| dc.description.abstract |
To investigate the local behavior of defects and mixed compositions in NbFeSb-based semiconductors, for improved thermoelectric efficiency, we have performed 93Nb and 121Sb NMR, as well as Mössbauer measurements, on pure NbFeSb and a series of p-type Ti-substituted (Nb,Ti)FeSb samples with different substitution levels. A small but consistently increasing paramagnetic defect density is observed with the increase of Ti substitution level revealing the existence of additional Ti-induced paramagnetic defects. NMR line shapes show a clear difference between effect of intrinsic and extrinsic defects in NbFeSb. The NMR shifts can be well understood by a model combining a Knight shift and composition-dependent chemical shift. The results indicate a nearly rigid-band behavior for the valence band with a small enhacement of effective mass vs substitution. For pure NbFeSb samples, the Mössbauer spectra include an additional T-dependent singlet. The increase of its area can be explained based on carriers activated into a shallow acceptor-like defect level above the valence band, consistent with the defect activation results obtained with NMR. In samples with Ti substitution, the Mössbauer spectra are consistent with a random neighbor distribution, indicating no preferential local ordering. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Mossbauer spectroscopy |
ru_RU |
| dc.subject |
NMR |
ru_RU |
| dc.subject |
thermoelectric efficiency |
ru_RU |
| dc.subject |
NbFeSb-based semiconductors |
ru_RU |
| dc.subject |
|
ru_RU |
| dc.title |
NMR and Mössbauer study of p-type half-Heusler thermoelectrics Nb 1− x Ti x FeSb |
ru_RU |
| dc.type |
Тезисы и материалы конференций в зарубежных журналах и сборниках |
ru_RU |
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