| Форма представления | Статьи в зарубежных журналах и сборниках |
| Год публикации | 2020 |
| Язык | английский |
|
Белушкин Александр Владиславович, автор
|
|
Goloshumova A.A. , автор
Horodek P. , автор
Isaenko L.I. , автор
Lobanov S.I. , автор
Siemek K. , автор
Yelisseyev A.P. , автор
|
| Библиографическое описание на языке оригинала |
Siemek K. Optical and positron annihilation studies of structural defects in LiInSe2 single crystals / K. Siemek, A.P. Yelisseyev, P. Horodek, S.I. Lobanov, A.A. Goloshumova, A.V. Belushkin, L.I. Isaenko // Optical Materials. - 2020. - v.109. - P. 110262-110269. |
| Аннотация |
Lithium-indium di-selenide (LiInSe2) is a semiconductor material, which has been shown promising for applications
in nonlinear optics and neutron detection. LiInSe2 crystals of optical quality, of different (from greenish
to red) color were grown. Analysis of the fundamental absorption edge shows allowed direct band-to-band
transitions and reveals structural disorder leading to the blurring of the edges of valence and conduction
bands. Photoluminescence (PL) intensity is low in LiInSe2 of stoichiometric composition and increases after
sample annealing in Se vapors. A narrow line at 408 nm is associated with free excitons. Analysis of PL and PL
excitation spectra allows one to associate broad emission bands with point defects as well as with self-trapped
excitons. The mean positron lifetime increases after annealing in Se vapor as a result of changes of the dominating
defect type. For red crystals only big voids with lifetime of about 1021 ps are observed. Both methods
suggest that greenish and red coloring of LiInSe2 are due to Se vacancies and interstitial Se atoms, respectively. |
| Ключевые слова |
Lithium-indium di-selenide, Semiconductor, Point defects,
Absorption,Photoluminescence, Positron annihilation |
| Название журнала |
Optical Materials
|
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=237217 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Белушкин Александр Владиславович |
ru_RU |
| dc.contributor.author |
Goloshumova A.A. |
ru_RU |
| dc.contributor.author |
Horodek P. |
ru_RU |
| dc.contributor.author |
Isaenko L.I. |
ru_RU |
| dc.contributor.author |
Lobanov S.I. |
ru_RU |
| dc.contributor.author |
Siemek K. |
ru_RU |
| dc.contributor.author |
Yelisseyev A.P. |
ru_RU |
| dc.date.accessioned |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2020 |
ru_RU |
| dc.identifier.citation |
Siemek K. Optical and positron annihilation studies of structural defects in LiInSe2 single crystals / K. Siemek, A.P. Yelisseyev, P. Horodek, S.I. Lobanov, A.A. Goloshumova, A.V. Belushkin, L.I. Isaenko // Optical Materials. - 2020. - v.109. - P. 110262-110269. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=237217 |
ru_RU |
| dc.description.abstract |
Optical Materials |
ru_RU |
| dc.description.abstract |
Lithium-indium di-selenide (LiInSe2) is a semiconductor material, which has been shown promising for applications
in nonlinear optics and neutron detection. LiInSe2 crystals of optical quality, of different (from greenish
to red) color were grown. Analysis of the fundamental absorption edge shows allowed direct band-to-band
transitions and reveals structural disorder leading to the blurring of the edges of valence and conduction
bands. Photoluminescence (PL) intensity is low in LiInSe2 of stoichiometric composition and increases after
sample annealing in Se vapors. A narrow line at 408 nm is associated with free excitons. Analysis of PL and PL
excitation spectra allows one to associate broad emission bands with point defects as well as with self-trapped
excitons. The mean positron lifetime increases after annealing in Se vapor as a result of changes of the dominating
defect type. For red crystals only big voids with lifetime of about 1021 ps are observed. Both methods
suggest that greenish and red coloring of LiInSe2 are due to Se vacancies and interstitial Se atoms, respectively. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Lithium-indium di-selenide |
ru_RU |
| dc.subject |
Semiconductor |
ru_RU |
| dc.subject |
Point defects |
ru_RU |
| dc.subject |
Absorption |
ru_RU |
| dc.subject |
Photoluminescence |
ru_RU |
| dc.subject |
Positron annihilation |
ru_RU |
| dc.title |
Optical and positron annihilation studies of structural defects in LiInSe2 single crystals |
ru_RU |
| dc.type |
Статьи в зарубежных журналах и сборниках |
ru_RU |
|
EN 
中文 
ES 
Карта сайта
