| Форма представления | Статьи в зарубежных журналах и сборниках |
| Год публикации | 2020 |
| Язык | английский |
|
Гумаров Амир Илдусович, автор
Рогов Алексей Михайлович, автор
|
| Библиографическое описание на языке оригинала |
Gumarov A.I, Rogov A.M, Stepanov A.L., Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation//Composites Communications. - 2020. - Vol.21, Is.. - Art. № 100415. |
| Аннотация |
The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1?1016 and 1.25?1017 ion/cm2 are presented. It was shown that if the dose is low Cu nanoparticles with average diameter of 10 nm are formed in a near-surface implanted Si layer. When the dose is higher Cu ions chemically interact with the Si atoms and the synthesis of the η«-phase Cu3Si instead of Cu nanoparticles is observed. Cu nanoparticles transformation to Cu3Si phase in the sample heated by long time implantation is discussed. |
| Ключевые слова |
Copper nanoparticles Copper silicide Ion implantation |
| Название журнала |
Composites Communications
|
| URL |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85089000316&doi=10.1016%2fj.coco.2020.100415&partnerID=40&md5=a4d1a68255b6ebf804a17b627532196d |
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=237553 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Гумаров Амир Илдусович |
ru_RU |
| dc.contributor.author |
Рогов Алексей Михайлович |
ru_RU |
| dc.date.accessioned |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2020 |
ru_RU |
| dc.identifier.citation |
Gumarov A.I, Rogov A.M, Stepanov A.L., Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation//Composites Communications. - 2020. - Vol.21, Is.. - Art. № 100415. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=237553 |
ru_RU |
| dc.description.abstract |
Composites Communications |
ru_RU |
| dc.description.abstract |
The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1?1016 and 1.25?1017 ion/cm2 are presented. It was shown that if the dose is low Cu nanoparticles with average diameter of 10 nm are formed in a near-surface implanted Si layer. When the dose is higher Cu ions chemically interact with the Si atoms and the synthesis of the η«-phase Cu3Si instead of Cu nanoparticles is observed. Cu nanoparticles transformation to Cu3Si phase in the sample heated by long time implantation is discussed. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
|
ru_RU |
| dc.title |
Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation |
ru_RU |
| dc.type |
Статьи в зарубежных журналах и сборниках |
ru_RU |
|
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