КФУ. Карточка публикации. Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions

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FORMATION OF PORES IN THIN GERMANIUM FILMS UNDER IMPLANTATION BY GE+ IONS

Форма представления

Статьи в зарубежных журналах и сборниках

Год публикации

2020

Язык

английский

Авторы, сотрудники КФУ

Гумаров Амир Илдусович, автор

Тагиров Ленар Рафгатович, автор

Янилкин Игорь Витальевич, автор

Библиографическое описание на языке оригинала

Lyadov N.M, Gavrilova T.P, Khantimerov S.M, Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions//Technical Physics Letters. - 2020. - Vol.46, Is.7. - P.707-709.

Аннотация

Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.

Ключевые слова

ion implantation lithium-ion batteries nanostructured germanium

Название журнала

Technical Physics Letters

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85090025781&doi=10.1134%2fS1063785020070196&partnerID=40&md5=6d5f31fd3155dcf39915caa62964bd8d

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https://repository.kpfu.ru/?p_id=238895

Полная запись метаданных

Поле DC	Значение	Язык
dc.contributor.author	Гумаров Амир Илдусович	ru_RU
dc.contributor.author	Тагиров Ленар Рафгатович	ru_RU
dc.contributor.author	Янилкин Игорь Витальевич	ru_RU
dc.date.accessioned	2020-01-01T00:00:00Z	ru_RU
dc.date.available	2020-01-01T00:00:00Z	ru_RU
dc.date.issued	2020	ru_RU
dc.identifier.citation	Lyadov N.M, Gavrilova T.P, Khantimerov S.M, Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions//Technical Physics Letters. - 2020. - Vol.46, Is.7. - P.707-709.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/?p_id=238895	ru_RU
dc.description.abstract	Technical Physics Letters	ru_RU
dc.description.abstract	Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject		ru_RU
dc.title	Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions	ru_RU
dc.type	Статьи в зарубежных журналах и сборниках	ru_RU