| Форма представления | Тезисы и материалы конференций в зарубежных журналах и сборниках |
| Год публикации | 2020 |
| Язык | английский |
|
Тагиров Ленар Рафгатович, автор
Усеинов Ниазбек Хамзович, автор
|
| Библиографическое описание на языке оригинала |
Useinov, A. Simulation of the nanoscale interconnects within a spin-resolved electron [Text] / A. Useinov, H.-H. Lin, N. Useinov and L. Tagirov // 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). 10-13 August, Hsinchu, Taiwan, 2020. pp. 72-73.
|
| Аннотация |
2020 International Symposium on VLSI Technology, Systems and Applications |
| Ключевые слова |
Nano-scale, domain wall, tunnel junction, spin-resolved conductance |
| Название журнала |
2020 International Symposium on VLSI Technology, Systems and Applications
|
| URL |
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9203729&isnumber=9203570&tag=1 |
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=241830 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Тагиров Ленар Рафгатович |
ru_RU |
| dc.contributor.author |
Усеинов Ниазбек Хамзович |
ru_RU |
| dc.date.accessioned |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2020-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2020 |
ru_RU |
| dc.identifier.citation |
Useinov, A. Simulation of the nanoscale interconnects within a spin-resolved electron [Text] / A. Useinov, H.-H. Lin, N. Useinov and L. Tagirov // 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). 10-13 August, Hsinchu, Taiwan, 2020. pp. 72-73.
|
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=241830 |
ru_RU |
| dc.description.abstract |
2020 International Symposium on VLSI Technology, Systems and Applications |
ru_RU |
| dc.description.abstract |
The work represents the theoretical modeling of the electrical conductance in the nanoscalc interconnects within approach of the extended point-like contact (PC) model. The approach describes a diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved conductance, that is important for the development of the heterojunction models, including 2D -3D interconnects. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to a purely quantum transport regimes without residual terms. The model of the PC assumes that the contact area can be replaced by a complex quantum device, e.g. single tunnel junction, narrow magnetic domain wall (DW), vacuum gap between tip and surface, source to drain transistor's channel, etc. The potential energy landscape of the device determines its electrical properties. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Nano-scale |
ru_RU |
| dc.subject |
domain wall |
ru_RU |
| dc.subject |
tunnel junction |
ru_RU |
| dc.subject |
spin-resolved conductance |
ru_RU |
| dc.title |
Simulation of the nanoscale interconnects within a spin-resolved electron |
ru_RU |
| dc.type |
Тезисы и материалы конференций в зарубежных журналах и сборниках |
ru_RU |
|
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