| Форма представления | Тезисы и материалы конференций в российских журналах и сборниках |
| Год публикации | 2024 |
| Язык | английский |
|
Усеинов Ниазбек Хамзович, автор
|
| Библиографическое описание на языке оригинала |
Useinov, N. Kh. Resonance conductance of electrons on interfaces of magnetic tunnel junction / N. Kh. Useinov // Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives” (EPR-80). Kazan, September 23-27, 2024 – P. 154-155. |
| Аннотация |
Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives” |
| Ключевые слова |
Spin-polarized conductance, magnetic tunnel junction, spintronics |
| Название журнала |
Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives”
|
| URL |
https://epr80.knc.ru/ |
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=304733 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Усеинов Ниазбек Хамзович |
ru_RU |
| dc.date.accessioned |
2024-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2024-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2024 |
ru_RU |
| dc.identifier.citation |
Useinov, N. Kh. Resonance conductance of electrons on interfaces of magnetic tunnel junction / N. Kh. Useinov // Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives” (EPR-80). Kazan, September 23-27, 2024 – P. 154-155. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=304733 |
ru_RU |
| dc.description.abstract |
Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives” |
ru_RU |
| dc.description.abstract |
Our research is devoted to the calculation of spin-polarized dynamic conductance in point magnetic tunnel junctions (PMTJs) which have a structure: Left ferromagnetic metal/dielectric/Right ferromagnetic metal (FML/I/FMR). These PMTJs are widely used in modern spintronics nanodevices, particularly in the field of data storage: MRAM devices, read heads of hard disk drives, and programmable logic gates. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Spin-polarized conductance |
ru_RU |
| dc.subject |
magnetic tunnel junction |
ru_RU |
| dc.subject |
spintronics |
ru_RU |
| dc.title |
Resonance conductance of electrons on interfaces of magnetic tunnel junction |
ru_RU |
| dc.type |
Тезисы и материалы конференций в российских журналах и сборниках |
ru_RU |
|
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