| Форма представления | Статьи в зарубежных журналах и сборниках |
| Год публикации | 2012 |
|
Гумаров Амир Илдусович, автор
Гумаров Габдрауф Габдрашитович, автор
Петухов Владимир Юрьевич, автор
Хайбуллин Рустам Ильдусович, автор
|
| Библиографическое описание на языке оригинала |
Gumarov G.G. MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon [Text] / G.G. Gumarov, V.Yu. Petukhov, A.I. Gumarov, R.A. Khalikov, D.A. Konovalov, V.F. Valeev, R.I. Khaibullin // Nucl. Instr. Meth. Phys. Res. B.. 2012. V. 272. P. 108-111. |
| Аннотация |
Magnetic-field-assisted ion-beam synthesis was used to produce thin magnetic films. Si wafers were
implanted with 40 keV Fe+ ions with a fluence of 3 10^17 cm^2 in the external magnetic field of
9.6 104 A/m. The samples were investigated by scanning magneto-optical Kerr effect magnetometry,
inductive magnetometry and reflection high-energy electron diffraction. The main synthesized phase
was ferromagnetic Fe3Si. In some regions of the samples the deviations of the easy magnetic axis near
the applied magnetic field were revealed. These local changes can be caused by various reasons: the presence
of mechanical stresses in a silicon substrate during the ion bombardment, the appearance of temperature
gradients, inhomogeneous sputtering and the appearance of small magnetic fields in the
chamber of the accelerator. |
| Ключевые слова |
Ion implantation, Magnetic nanoparticles, MOKE |
| URL |
http://www.sciencedirect.com/science/article/pii/S0168583X11000620 |
| Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на эту карточку |
https://repository.kpfu.ru/?p_id=71834 |
Полная запись метаданных  |
| Поле DC |
Значение |
Язык |
| dc.contributor.author |
Гумаров Амир Илдусович |
ru_RU |
| dc.contributor.author |
Гумаров Габдрауф Габдрашитович |
ru_RU |
| dc.contributor.author |
Петухов Владимир Юрьевич |
ru_RU |
| dc.contributor.author |
Хайбуллин Рустам Ильдусович |
ru_RU |
| dc.date.accessioned |
2012-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2012-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2012 |
ru_RU |
| dc.identifier.citation |
Gumarov G.G. MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon [Text] / G.G. Gumarov, V.Yu. Petukhov, A.I. Gumarov, R.A. Khalikov, D.A. Konovalov, V.F. Valeev, R.I. Khaibullin // Nucl. Instr. Meth. Phys. Res. B.. 2012. V. 272. P. 108-111. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/?p_id=71834 |
ru_RU |
| dc.description.abstract |
Magnetic-field-assisted ion-beam synthesis was used to produce thin magnetic films. Si wafers were
implanted with 40 keV Fe+ ions with a fluence of 3 10^17 cm^2 in the external magnetic field of
9.6 104 A/m. The samples were investigated by scanning magneto-optical Kerr effect magnetometry,
inductive magnetometry and reflection high-energy electron diffraction. The main synthesized phase
was ferromagnetic Fe3Si. In some regions of the samples the deviations of the easy magnetic axis near
the applied magnetic field were revealed. These local changes can be caused by various reasons: the presence
of mechanical stresses in a silicon substrate during the ion bombardment, the appearance of temperature
gradients, inhomogeneous sputtering and the appearance of small magnetic fields in the
chamber of the accelerator. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Ion implantation |
ru_RU |
| dc.subject |
Magnetic nanoparticles |
ru_RU |
| dc.subject |
MOKE |
ru_RU |
| dc.title |
MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon |
ru_RU |
| dc.type |
Статьи в зарубежных журналах и сборниках |
ru_RU |
|
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