KFU. Card publication. Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering

KAZAN
FEDERAL UNIVERSITY

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ELECTRICAL PROPERTIES OF TITANIUM NITRIDE FILMS SYNTHESIZED BY REACTIVE MAGNETRON SPUTTERING

Form of presentation

Articles in Russian journals and collections

Year of publication

2017

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Authors, employees of KFU

Vakhitov Iskander Rashidovich, author

Gumarov Amir Ildusovich, author

Kiyamov Ayrat Gazinurovich, author

Nikitin Sergey Ivanovich, author

Tagirov Lenar Rafgatovich, author

Kharincev Sergey Sergeevich, author

Yusupov Roman Valerevich, author

Yanilkin Igor Vitalevich, author

Bibliographic description in the original language

Mohammed W. M. et al. Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering //Journal of Physics: Conference Series. – IOP Publishing, 2017. – T. 927. – �. 1. – S. 012036.

Annotation

Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.

Keywords

Deposition conditions,metallic targets, MgO substrate, polycrystalline, reactive DC magnetron sputtering, reactive magnetron sputtering, titanium nitride films, Van der Pauw method

The name of the journal

Journal of Physics: Conference Series

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=173295&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Vakhitov Iskander Rashidovich	ru_RU
dc.contributor.author	Gumarov Amir Ildusovich	ru_RU
dc.contributor.author	Kiyamov Ayrat Gazinurovich	ru_RU
dc.contributor.author	Nikitin Sergey Ivanovich	ru_RU
dc.contributor.author	Tagirov Lenar Rafgatovich	ru_RU
dc.contributor.author	Kharincev Sergey Sergeevich	ru_RU
dc.contributor.author	Yusupov Roman Valerevich	ru_RU
dc.contributor.author	Yanilkin Igor Vitalevich	ru_RU
dc.date.accessioned	2017-01-01T00:00:00Z	ru_RU
dc.date.available	2017-01-01T00:00:00Z	ru_RU
dc.date.issued	2017	ru_RU
dc.identifier.citation	Mohammed W. M. et al. Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering //Journal of Physics: Conference Series. – IOP Publishing, 2017. – �. 927. – �. 1. – �. 012036.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=173295&p_lang=2	ru_RU
dc.description.abstract	Journal of Physics: Conference Series	ru_RU
dc.description.abstract	Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Deposition conditions	ru_RU
dc.subject	metallic targets	ru_RU
dc.subject	MgO substrate	ru_RU
dc.subject	polycrystalline	ru_RU
dc.subject	reactive DC magnetron sputtering	ru_RU
dc.subject	reactive magnetron sputtering	ru_RU
dc.subject	titanium nitride films	ru_RU
dc.subject	Van der Pauw method	ru_RU
dc.title	Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering	ru_RU
dc.type	Articles in Russian journals and collections	ru_RU