KFU. Card publication. Simulation of the nanoscale interconnects within a spin-resolved electron

KAZAN
FEDERAL UNIVERSITY

- RUS
- 中文
- ES

SIMULATION OF THE NANOSCALE INTERCONNECTS WITHIN A SPIN-RESOLVED ELECTRON

Form of presentation

Conference proceedings in international journals and collections

Year of publication

2020

Язык

английский

Authors, employees of KFU

Tagirov Lenar Rafgatovich, author

Useinov Niazbek Khamzovich, author

Bibliographic description in the original language

Useinov, A. Simulation of the nanoscale interconnects within a spin-resolved electron [Text] / A. Useinov, H.-H. Lin, N. Useinov and L. Tagirov // 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). 10-13 August, Hsinchu, Taiwan, 2020. pp. 72-73.

Annotation

2020 International Symposium on VLSI Technology, Systems and Applications

Keywords

Nano-scale, domain wall, tunnel junction, spin-resolved conductance

The name of the journal

2020 International Symposium on VLSI Technology, Systems and Applications

URL

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9203729&isnumber=9203570&tag=1

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=241830&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Tagirov Lenar Rafgatovich	ru_RU
dc.contributor.author	Useinov Niazbek Khamzovich	ru_RU
dc.date.accessioned	2020-01-01T00:00:00Z	ru_RU
dc.date.available	2020-01-01T00:00:00Z	ru_RU
dc.date.issued	2020	ru_RU
dc.identifier.citation	Useinov, A. Simulation of the nanoscale interconnects within a spin-resolved electron [Text] / A. Useinov, H.-H. Lin, N. Useinov and L. Tagirov // 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). 10-13 August, Hsinchu, Taiwan, 2020. pp. 72-73.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=241830&p_lang=2	ru_RU
dc.description.abstract	2020 International Symposium on VLSI Technology, Systems and Applications	ru_RU
dc.description.abstract	The work represents the theoretical modeling of the electrical conductance in the nanoscalc interconnects within approach of the extended point-like contact (PC) model. The approach describes a diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved conductance, that is important for the development of the heterojunction models, including 2D -3D interconnects. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to a purely quantum transport regimes without residual terms. The model of the PC assumes that the contact area can be replaced by a complex quantum device, e.g. single tunnel junction, narrow magnetic domain wall (DW), vacuum gap between tip and surface, source to drain transistor's channel, etc. The potential energy landscape of the device determines its electrical properties.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Nano-scale	ru_RU
dc.subject	domain wall	ru_RU
dc.subject	tunnel junction	ru_RU
dc.subject	spin-resolved conductance	ru_RU
dc.title	Simulation of the nanoscale interconnects within a spin-resolved electron	ru_RU
dc.type	Conference proceedings in international journals and collections	ru_RU