Form of presentation | Articles in international journals and collections |
Year of publication | 2003 |
|
Aminova Roza Mukhametovna, author
Bukharaev Anastas Akhmetovich, author
|
Bibliographic description in the original language |
202. Niaz I. Nurgazizov, Anastas A. Bukharaev, Roza M.Aminova and Denis V.Ovchinnikov. Investigation of dissolution process of implanted silicon dioxide. Proceedings of International Conference “Micro- and Nanoelectronics - 2003” (ICMNE-2003), Zvenigorod, Moskow district, October 6-10, 2003. S.
203. Niaz I. Nurgazizov, Anastas A. Bukharaev, Roza M.Aminova and Denis V.Ovchinnikov. Investigation of dissolution process of implanted silicon dioxide. Proceedings of SPIE, Micro- and Nanoelectronics –2003 , vol. 5401, pp. 147-154 (2003).
|
Annotation |
Proceedings of Spie |
Keywords |
диоксид кремния, теория функционала плотности |
The name of the journal |
Proceedings of Spie
|
Please use this ID to quote from or refer to the card |
https://repository.kpfu.ru/eng/?p_id=78899&p_lang=2 |
Full metadata record |
Field DC |
Value |
Language |
dc.contributor.author |
Aminova Roza Mukhametovna |
ru_RU |
dc.contributor.author |
Bukharaev Anastas Akhmetovich |
ru_RU |
dc.date.accessioned |
2003-01-01T00:00:00Z |
ru_RU |
dc.date.available |
2003-01-01T00:00:00Z |
ru_RU |
dc.date.issued |
2003 |
ru_RU |
dc.identifier.citation |
202. Niaz I. Nurgazizov, Anastas A. Bukharaev, Roza M.Aminova and Denis V.Ovchinnikov. Investigation of dissolution process of implanted silicon dioxide. Proceedings of International Conference “Micro- and Nanoelectronics - 2003” (ICMNE-2003), Zvenigorod, Moskow district, October 6-10, 2003. С.
203. Niaz I. Nurgazizov, Anastas A. Bukharaev, Roza M.Aminova and Denis V.Ovchinnikov. Investigation of dissolution process of implanted silicon dioxide. Proceedings of SPIE, Micro- and Nanoelectronics –2003 , vol. 5401, pp. 147-154 (2003).
|
ru_RU |
dc.identifier.uri |
https://repository.kpfu.ru/eng/?p_id=78899&p_lang=2 |
ru_RU |
dc.description.abstract |
Proceedings of Spie |
ru_RU |
dc.description.abstract |
Proceedings of Spie |
ru_RU |
dc.description.abstract |
Методами квантовой химии изучена структура имплантированного диоксида кремния на поверхности |
ru_RU |
dc.language.iso |
ru |
ru_RU |
dc.subject |
диоксид кремния |
ru_RU |
dc.subject |
теория функционала плотности |
ru_RU |
dc.title |
202. N.I. Nurgazizov, A.A. Bukharaev, Roza M.Aminova and D.V.Ovchinnikov. Investigation of dissolution process of implanted silicon dioxide. Proceedings of International Conference “Micro- and Nanoelectronics - 2003” (ICMNE-2003), Zvenigorod, Moskow district, October 6-10, 2003. С.
203. Niaz I. Nurgazizov, Anastas A. Bukharaev, Roza M.Aminova and Denis V.Ovchinnikov. Investigation of dissolution process of implanted silicon dioxide. Proceedings of SPIE, Micro- and Nanoelectronics –2003 , vol. 5401, pp. 147-154 (2003).
|
ru_RU |
dc.type |
Articles in international journals and collections |
ru_RU |
|